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high voltage power schottky rectifier MBR10200C 1 bcd semiconductor manufacturing limited mar. 2011 rev. 1. 4 data sheet general description high voltage dual schottky rectifier suited for switch mode power supplies and other power converters. this device is intended for use in medium voltage opera- tion, and particularly, in high frequency circuits where low switching losses and low noise are required. MBR10200C is available in to-220-3, to-220-3 (2) and to-220f-3 packages. features high surge capacity 150 o c operating junction temperature 10a total (5a each diode leg) guard-ring for stress protection pb-free package applications power supply output rectification power management instrumentation main product characteristics mechanical characteristics case: epoxy, molded epoxy meets ul 94v-0 @ 0.125in. weight (approximately): 1.9grams (to-220-3, to-220-3 (2) and to-220f-3) finish: all external surf aces corrosion resistant and terminal leads are readily solderable lead temperature for soldering purposes: 260 o c maximum for 10 seconds i f(av) 2 5a v rrm 200v t j 150 o c v f (max) 0.85v figure 1. package types of MBR10200C to-220-3 (optional) to-220f-3 to-220-3 (2)
high voltage power schottky rectifier MBR10200C 2 bcd semiconductor manufacturing limited mar. 2011 rev. 1. 4 data sheet pin configuration figure 2. pin configuration of MBR10200C (top view) t package figure 3. internal structure of MBR10200C tf package (to - 220f-3) (to-220-3) (optional) (to-220-3 (2)) 1 2 3 a1 k a2 1 2 3 a1 k a2 a1 a2 k 1 2 3 a1 k a2
high voltage power schottky rectifier MBR10200C 3 bcd semiconductor manufacturing limited mar. 2011 rev. 1. 4 data sheet package part number marking id packing type lead free green lead free green to-220-3 (2) MBR10200Ct-e1 MBR10200Ct-g1 MBR10200Ct-e1 MBR10200Ct-g1 tube to-220f-3 MBR10200Ctf-e1 MBR10200Ctf- g1 MBR10200Ctf-e1 MBR10200Ctf-g1 tube ordering information circuit type package e1: lead free MBR10200C - blank: tube g1: green bcd semiconductor's pb-free products, as desi gnated with "e1" suffix in the part number, are rohs compliant. products with "g1" suffix are available in green packages. t: to-220-3 (2) tf: to-220f-3 to-220-3 (optional)
high voltage power schottky rectifier MBR10200C 4 bcd semiconductor manufacturing limited mar. 2011 rev. 1. 4 data sheet parameter symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 200 v average rectified forward current (rated v r ) t c =140 o c i f(av) 5a peak repetitive forward current (rated v r , square wave, 20khz) t c =138 o c i frm 10 a non repetitive peak surge curre nt (surge applied at rated load conditions half wave, single phase, 60khz) i fsm 100 a operating junction temperature (note 2) t j 150 o c storage temperature range t stg -50 to 150 o c voltage rate of change (rated v r ) dv/dt 10000 v/ s esd (machine model=c) >400 v esd (human body model=3b) >8000 v note 1: stresses greater than those li sted under "absolute maximum ratings" may cause perm anent damage to the device. these are stress ratings only, and functi onal operation of the device at these or any other condi tions beyond those indicated under "recommended operating c onditions" is not implied. exposure to "abs olute maximum ratings" for extended periods may affect device reliability. note 2: the heat generated must be less than the thermal conductivity from junction to ambient: dp d /dt j < 1/ ja . absolute maximum ratings (each diode leg) (note 1) parameter symbol condition value unit maximum thermal resistance jc junction to case to-220-3/ to-220-3 (2) 3.0 o c/w to-220f-3 4.5 ja junction to ambient to-220-3/ to-220-3 (2) 60 to-220f-3 60 thermal characteristics
high voltage power schottky rectifier MBR10200C 5 bcd semiconductor manufacturing limited mar. 2011 rev. 1. 4 data sheet parameter condition symbol value unit maximum instantaneous forward voltage drop (note 3) i f =5a, t c =25 o c v f 0.95 v i f =5a, t c =125 o c 0.85 maximum instantaneous reverse cur- rent (note 3) rated dc voltage, t c =25 o c i r 0.15 ma rated dc voltage, t c =125 o c 15 electrical characteristics (each diode leg) note 3: pulse test: pulse width=300 s, duty cycle 2.0%.
high voltage power schottky rectifier MBR10200C 6 bcd semiconductor manufacturing limited mar. 2011 rev. 1. 4 data sheet figure 4. typical forward voltage per diode figure 5. typical reverse current per diode typical performance characteristics 0 50 100 150 200 1e-3 0.01 0.1 1 10 100 1000 reverse current (ua) reverse voltage (v) 25 o c 125 o c 150 o c 0.01 0.1 1 10 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 forward voltage (v) instantaneout forward current (a) 25 o c 125 o c 150 o c
high voltage power schottky rectifier MBR10200C 7 bcd semiconductor manufacturing limited mar. 2011 rev. 1. 4 data sheet typical performance characteristics figure 6. average forward current vs. case temperature (per diode) 100 105 110 115 120 125 130 135 140 145 150 155 160 0 1 2 3 4 5 6 7 8 9 10 average forward current amps case temperature ( o c)
high voltage power schottky rectifier MBR10200C 8 bcd semiconductor manufacturing limited mar. 2011 rev. 1. 4 data sheet mechanical dimensions to-220-3 unit: mm(inch) 3.560(0.140) 1 4 . 2 3 0 ( 0 . 5 6 0 ) 1.160(0.046) 0.813(0.032) 8 . 7 6 3 ( 0 . 3 4 5 ) 2.540(0.100) 0.356(0.014) 2.080(0.082) 3 7 3.560(0.140) 7 9.660(0.380) 0.550(0.022) 60 0.381(0.015) 2 . 5 8 0 ( 0 . 1 0 2 ) 6 0 8 . 5 2 0 ( 0 . 3 3 5 ) 1.500(0.059) 0.200(0.008) 1 . 8 5 0 ( 0 . 0 7 3 ) 2.540(0.100) 0.381(0.015) 0.406(0.016) 3 . 3 8 0 ( 0 . 1 3 3 ) 10.660(0.420) 4.060(0.160) 1.350(0.053) 2 7 . 8 8 0 ( 1 . 0 9 8 ) 3 0 . 2 8 0 ( 1 . 1 9 2 ) 9 . 5 2 0 ( 0 . 3 7 5 ) 1 6 . 5 1 0 ( 0 . 6 5 0 ) 4.820(0.190) 2.880(0.113) 1.760(0.069) (optional)
high voltage power schottky rectifier MBR10200C 9 bcd semiconductor manufacturing limited mar. 2011 rev. 1. 4 data sheet mechanical dimens ions (continued) to-220-3 (2) unit: mm(inch) 3 3 3 9.800(0.386) 10.200(0.402) 3.560(0.140) 3.640(0.143) 11.100(0.437) ref 0.700(0.028) 0.900(0.035) 1.170(0.046) 1.390(0.055) 2.540(0.100) ref 2.540(0.100) ref 9.600(0.378) 10.600(0.417) 12.600(0.496) 13.600(0.535) 9.000(0.354) 9.400(0.370) 1.200(0.047) 1.400(0.055) 0.600(0.024) ref 6.300(0.248) 6.700(0.264) 4.400(0.173) 4.600(0.181) 2.200(0.087) 2.500(0.098) 0.400(0.016) 0.600(0.024) 1.620(0.064) 1.820(0.072) 1.200(0.047) 1.400(0.055) 3.000(0.118) ref ?
high voltage power schottky rectifier MBR10200C 10 bcd semiconductor manufacturing limited mar. 2011 rev. 1. 4 data sheet 4.300(0.169) 0.450(0.018) 0.600(0.024) 2.540(0.100) 9.700(0.382) 10.300(0.406) 6.900(0.272) 7.100(0.280) 3.000(0.119) 3.400(0.134) 14.700(0.579) 16.000(0.630) 1.000(0.039) 1.400(0.055) 1.100(0.043) 1.500(0.059) 2.790(0.110) 4.500(0.177) 12.500(0.492) 13.500(0.531) 0.550(0.022) 0.900(0.035) 2.540(0.100) 3.000(0.119) 3.550(0.140) 3.370(0.133) 3.900(0.154) 2.350(0.093) 2.900(0.114) 4.900(0.193) [ mechanical dimens ions (continued) to-220f-3 unit: mm(inch) ?
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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